CONCENTRATION-DEPENDENCE OF MINORITY-CARRIER DIFFUSION LENGTH AND LIFETIME IN GAP

被引:48
作者
YOUNG, ML
WIGHT, DR
机构
来源
JOURNAL OF PHYSICS F-METAL PHYSICS | 1974年 / 7卷 / 13期
关键词
D O I
10.1088/0022-3727/7/13/308
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1824 / 1837
页数:14
相关论文
共 25 条
[1]  
ABAGYAN SA, 1965, FIZ TVERD TELA+, V6, P2529
[2]   MEASUREMENT OF EXTRINSIC ROOM-TEMPERATURE MINORITY CARRIER LIFETIME IN GAP [J].
BACHRACH, RZ ;
LORIMOR, OG .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :500-&
[3]   VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J].
CASEY, HC ;
ERMANIS, F ;
WOLFSTIRN, KB .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) :2945-+
[4]   CATHODOLUMINESCENT MEASUREMENTS IN GAP (ZN, O) [J].
CASEY, HC ;
JAYSON, JS .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2774-&
[5]   MINORITY-CARRIER LIFETIMES AND LUMINESCENCE EFFICIENCIES IN NITROGEN-DOPED GAP [J].
DAPKUS, PD ;
HACKETT, WH ;
LORIMOR, OG ;
KAMMLOTT, GW ;
HASZKO, SE .
APPLIED PHYSICS LETTERS, 1973, 22 (05) :227-229
[6]   OPTICAL ABSORPTION BY IMPURITIES IN P-TYPE GALLIUM PHOSPHIDE [J].
DISHMAN, JM ;
DIDOMENICO, M .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (08) :2621-+
[7]   DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].
GARTNER, WW .
PHYSICAL REVIEW, 1959, 116 (01) :84-87
[8]   RADIATIVE PAIR RECOMBINATION AND SURFACE RECOMBINATION IN GAP PHOTOLUMINESCENCE - (DONOR-ACCEPTOR PAIR BANDS - 20 TO 298 DEGREES K - AR LASER EXCITATION - E/T) [J].
GERSHENZON, M ;
MIKULYAKRM .
APPLIED PHYSICS LETTERS, 1966, 8 (10) :245-+
[9]   SCANNING ELECTRON-MICROSCOPE CHARACTERIZATION OF GAP RED-EMITTING DIODES [J].
HACKETT, WH ;
SAUL, RH ;
KAMMLOTT, GW ;
DIXON, RW .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2857-+
[10]   PHOTOLUMINESCENT SATURATION IN GAP (ZN, O) [J].
JAYSON, JS .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3854-&