CONCENTRATION-DEPENDENCE OF MINORITY-CARRIER DIFFUSION LENGTH AND LIFETIME IN GAP

被引:48
作者
YOUNG, ML
WIGHT, DR
机构
来源
JOURNAL OF PHYSICS F-METAL PHYSICS | 1974年 / 7卷 / 13期
关键词
D O I
10.1088/0022-3727/7/13/308
中图分类号
O59 [应用物理学];
学科分类号
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页码:1824 / 1837
页数:14
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共 25 条
[11]  
KAGAN MB, 1971, SOV PHYS SEMICOND+, V4, P1217
[13]   SURFACE EFFECTS OF GAAS0.6P0.4 LIGHT EMITTING DIODES [J].
LEISTIKO, O ;
BITTMANN, CA .
SOLID-STATE ELECTRONICS, 1973, 16 (12) :1321-1336
[14]   EFFICIENT GREEN ELECTROLUMINESCENCE IN NITROGEN-DOPED GAP P-N JUNCTIONS [J].
LOGAN, RA ;
WHITE, HG ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1968, 13 (04) :139-&
[15]   CHARGE MULTIPLICATION IN GAP-P-N-JUNCTIONS [J].
LOGAN, RA ;
CHYNOWETH, AG .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) :1649-&
[16]   MINORITY CARRIER LIFETIME IN GAP ELECTROLUMINESCENT DIODES [J].
MAEDA, K ;
KASAMI, A ;
TOYAMA, M ;
WAKAMATSU, N .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (01) :65-+
[17]  
PEAKER AR, 1972, J PHYS D APPL PHYS, V5, P803, DOI 10.1088/0022-3727/5/4/323
[18]   OXIDATION OF GAP IN AN AQUEOUS H2O2 SOLUTION [J].
SCHWARTZ, B ;
SUNDBURG, WJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) :576-580
[19]   MINORITY CARRIER DIFFUSION LENGTH IN LIQUID EPITAXIAL GAP [J].
SMITH, BL ;
ABBOTT, M .
SOLID-STATE ELECTRONICS, 1972, 15 (04) :361-&
[20]   INFLUENCE OF RECOMBINATION IN P-N-JUNCTION SPACE-CHARGE REGION ON PHOTOCURRENT UNDER PARALLEL ILLUMINATION [J].
SOSTARICH, M .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1973, 35 (02) :277-280