GROWTH OF OXIDE LAYERS ON GALLIUM-ARSENIDE WITH A HIGH KINETIC-ENERGY ATOMIC OXYGEN BEAM

被引：11

作者：

HOFFBAUER, MA ^{[1
]}

CROSS, JB ^{[1
]}

BERMUDEZ, VM ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 21期

关键词：

D O I：

10.1063/1.103933

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxide layers have been formed on (110) and (100) GaAs wafers by exposure to a high kinetic energy beam of atomic O and characterized using x-ray photoemission spectroscopy (with Ar+ ion sputter profiling) and Raman spectroscopy. Photoemission shows the reacted layer, ∼500 Å thick, to be uniform in composition and fully oxidized. Raman spectroscopy shows that the substrate is not appreciably disordered during oxidation and in some cases no free-elemental As is present at the oxide-substrate interface at a detectable level.

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页码：2193 / 2195

页数：3

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