THE PHOTOCHEMICAL OXIDATION OF GAAS

被引:20
作者
BERTRAND, PA
机构
关键词
D O I
10.1149/1.2113996
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:973 / 976
页数:4
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[1]  
BERTRAND P, UNPUB
[2]   FAST OPTICAL POSITION-SENSITIVE DETECTOR FOR MCPHERSON ESCA-36 [J].
BERTRAND, PA ;
KALINOWSKI, WJ ;
TRIBBLE, LE ;
TOLENTINO, LU .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1983, 54 (03) :387-389
[3]   XPS STUDY OF CHEMICALLY ETCHED GAAS AND INP [J].
BERTRAND, PA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01) :28-33
[4]   APPLICATION OF SELECTIVE CHEMICAL-REACTION CONCEPT FOR CONTROLLING THE PROPERTIES OF OXIDES ON GAAS [J].
CHANG, RPH ;
COLEMAN, JJ ;
POLAK, AJ ;
FELDMAN, LC ;
CHANG, CC .
APPLIED PHYSICS LETTERS, 1979, 34 (03) :237-238
[5]   IMPROVEMENTS IN GAAS PLASMA-DEPOSITED SILICON-NITRIDE INTERFACE QUALITY BY PRE-DEPOSITION GAAS SURFACE-TREATMENT AND POST-DEPOSITION ANNEALING [J].
CLARK, MD ;
ANDERSON, CL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :453-456
[6]   INTERFACE-STATE BAND MODEL FOR GAAS AND GAP ANODIC MOS STRUCTURES [J].
HASEGAWA, H ;
SAWADA, T ;
SAKAI, T .
SURFACE SCIENCE, 1979, 86 (JUL) :819-825
[7]   MEASUREMENTS OF CHEMICAL SHIFTS IN PHOTOELECTRON SPECTRA OF ARSENIC AND BROMINE COMPOUNDS [J].
HULETT, LD ;
CARLSON, TA .
APPLIED SPECTROSCOPY, 1971, 25 (01) :33-&
[8]   EFFECTS OF WATER-VAPOR AND OXYGEN EXCITATION ON OXIDATION OF GAAS, GAP AND INSB SURFACES STUDIED BY X-RAY PHOTOEMISSION SPECTROSCOPY [J].
IWASAKI, H ;
MIZOKAWA, Y ;
NISHITANI, R ;
NAKAMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (08) :1525-1529
[9]   X-RAY PHOTOEMISSION STUDY OF OXIDATION PROCESS AT CLEAVED (110) SURFACES OF GAAS, GAP AND INSB [J].
IWASAKI, H ;
MIZOKAWA, Y ;
NISHITANI, R ;
NAKAMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) :1925-1933
[10]   X-RAY PHOTOEMISSION STUDY OF INTERACTION OF OXYGEN AND AIR WITH CLEAVED GAAS (110) SURFACES [J].
IWASAKI, H ;
MIZOKAWA, Y ;
NISHITANI, R ;
NAKAMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (02) :315-320