INTERFACE-STATE BAND MODEL FOR GAAS AND GAP ANODIC MOS STRUCTURES

On the basis of detailed electrical measurements made on GaAs and GaP anodic MOS structures prepared by the AGW process, a novel Interface-State Band (ISB) model is established, where acceptor-like ISB and donor-like ISB form a U-shaped state density distribution in the lower part of the energy gap, and cause various quasi-static and dynamic anomalous behaviors. Analysis of the time constant dispersion of states shows that ISB's are related to interfacial traps in the oxide. Thermal and optical MOS capacitance transient study supports the model, and reveals some properties of ISB's that may be useful for memory, light detection and emission applications. © 1979.