GUNN-EFFECT OSCILLATORS WITH VAPOUR-GROWN CONTACT LAYERS

被引:5
作者
BASS, JC
EDRIDGE, AL
KNIGHT, JR
机构
关键词
D O I
10.1049/el:19670019
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:24 / &
相关论文
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[1]  
BRADY DP, 1966, SEP S GALL ARS READ
[2]  
BRADY DP, 1966, P I ELECT ELECTRONIC, V54, P1498
[3]  
CARROLL JE, 1966, 4 INT C MICR OPT GEN
[4]  
HILSUM C, 1965, ELECTRON LETT, V1, P178
[5]   PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J].
KNIGHT, JR ;
EFFER, D ;
EVANS, PR .
SOLID-STATE ELECTRONICS, 1965, 8 (02) :178-&