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BAND OFFSET OF GAAS/IN0.48GA0.52P MEASURED UNDER HYDROSTATIC-PRESSURE

被引：107
作者：
CHEN, JH
SITES, JR
SPAIN, IL
HAFICH, MJ
ROBINSON, GY
机构：
[1] COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
[2] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 07期
关键词：
D O I：
10.1063/1.104534
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low-temperature photoluminescence spectra of an In0.48Ga0.52P alloy and a p-type GaAs/In0.48Ga0.52P multiple quantum well, both grown by molecular beam epitaxy, have been obtained under hydrostatic pressures from 0 to 6 GPa. The zero-pressure extrapolation of the InGaP(X) to GaAs(GAMMA) transitions yields a 0.40 +/- 0.02 valence-band offset, and hence only a small, 0.06 +/- 0.02 eV, conduction-band offset. These offset values are in agreement with measured values of the confinement energy versus well width.
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页码：744 / 746
页数：3
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