CONDUCTION-BAND AND VALENCE-BAND OFFSETS IN GAAS/GA0.51IN0.49P SINGLE QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：124

作者：

BISWAS, D ^{[1
]}

DEBBAR, N ^{[1
]}

BHATTACHARYA, P ^{[1
]}

RAZEGHI, M ^{[1
]}

DEFOUR, M ^{[1
]}

OMNES, F ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 09期

关键词：

D O I：

10.1063/1.102677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have independently estimated the conduction- and valence-band offsets ΔEc and ΔEv in GaAs/Ga0.51In 0.49P quantum wells by measuring the capacitance transient resulting from thermal emission of carriers from the respective wells. The heterostructure samples were grown by low-pressure metalorganic chemical vapor deposition. The band offsets are extrapolated from the emission activation energies with appropriate corrections. The estimated values of ΔEc and ΔEv are 0.198 and 0.285 eV, respectively.

引用

页码：833 / 835

页数：3

共 7 条

[1]

CHAN YJ, 1989, 15TH P INT S GALL AR, P459

[2] CONDUCTION-BAND OFFSETS IN PSEUDOMORPHIC INXGA1-XAS/AL0.2GA0.8AS QUANTUM WELLS (0.07 LESS-THAN-OR-EQUAL-TO 0.18) MEASURED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].