DETERMINATION OF VALENCE AND CONDUCTION-BAND DISCONTINUITIES AT THE (GA,IN) P/GAAS HETEROJUNCTION BY C-V PROFILING

被引：194

作者：

RAO, MA

CAINE, EJ

KROEMER, H

LONG, SI

BABIC, DI

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 02期

关键词：

D O I：

10.1063/1.338931

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：643 / 649

页数：7

共 19 条

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[9] DETERMINATION OF HETEROJUNCTION BAND OFFSETS BY CAPACITANCE-VOLTAGE PROFILING THROUGH NONABRUPT ISOTYPE HETEROJUNCTIONS [J].

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