THE ROLE OF NONUNIFORM DIELECTRIC PERMITTIVITY IN THE DETERMINATION OF HETEROJUNCTION BAND OFFSETS BY C-V PROFILING THROUGH ISOTYPE HETEROJUNCTIONS

被引：15

作者：

BABIC, DI

KROEMER, H

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 10期

关键词：

D O I：

10.1016/0038-1101(85)90032-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1015 / 1017

页数：3

相关论文

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[4] MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR-BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILING [J].

PEOPLE, R ;

WECHT, KW ;

ALAVI, K ;

CHO, AY .

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[5]

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