EXTREMELY HIGH ELECTRON-MOBILITY IN A GAAS-GAXIN1-XP HETEROSTRUCTURE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：45

作者：

RAZEGHI, M ^{[1
]}

DEFOUR, M ^{[1
]}

OMNES, F ^{[1
]}

DOBERS, M ^{[1
]}

VIEREN, JP ^{[1
]}

GULDNER, Y ^{[1
]}

机构：

[1] ECOLE NORM SUPER,PHYS SOLIDES GRP,F-75231 PARIS 05,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 05期

关键词：

D O I：

10.1063/1.101851

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：457 / 459

页数：3

共 18 条

[1] BASTARD G, 1988, WAVE MECHANICS APPLI, P175
[2] BENAMOR S, 1989, J APPL PHYS, V65, P2756, DOI 10.1063/1.342765
[3] CHLORIDE VAPOR-PHASE EPITAXIAL-GROWTH OF A GA0.52IN0.48P/GAAS HETEROSTRUCTURE WITH AN ABRUPT HETEROINTERFACE
HOSHINO, M
KODAMA, K
KITAHARA, K
KOMENO, J
OZEKI, M
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (15) : 983 - 985
[4] SHALLOW AND DEEP DONOR LEVELS IN S-DOPED GA0.52IN0.48P GROWN BY CHLORIDE VPE
KITAHARA, K
HOSHINO, M
KODAMA, K
OZEKI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03): : L191 - L193
[5] OBSERVATION OF DONOR-RELATED DEEP LEVELS IN GAXIN1-XP (0.52-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.71)
KITAHARA, K
HOSHINO, M
OZEKI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01): : L110 - L112
[6] DONOR-RELATED DEEP LEVEL IN S-DOPED GA0.52IN0.48P GRWON BY CHLORIDE VPE
KITAHARA, K
HOSHINO, M
KODAMA, K
OZEKI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (07): : L534 - L536
[7] MADELUNG O, 1982, LANDOLTBORNSTEIN 3
[8] DETERMINATION OF VALENCE AND CONDUCTION-BAND DISCONTINUITIES AT THE (GA,IN) P/GAAS HETEROJUNCTION BY C-V PROFILING
RAO, MA
CAINE, EJ
KROEMER, H
LONG, SI
BABIC, DI
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) : 643 - 649
[9] 1ST OBSERVATION OF THE TWO-DIMENSIONAL PROPERTIES OF THE ELECTRON-GAS IN GA0.49IN0.51P/GAASHETEROJUNCTIONS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
RAZEGHI, M
MAUREL, P
OMNES, F
BENARMOR, S
DMOWSKI, L
PORTAL, JC
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1267 - 1269
[10] RAZEGHI M, UNPUB

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