CHLORIDE VAPOR-PHASE EPITAXIAL-GROWTH OF A GA0.52IN0.48P/GAAS HETEROSTRUCTURE WITH AN ABRUPT HETEROINTERFACE

被引：3

作者：

HOSHINO, M

KODAMA, K

KITAHARA, K

KOMENO, J

OZEKI, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 15期

关键词：

D O I：

10.1063/1.96631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：983 / 985

页数：3

共 18 条

[1]

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[6] TWO-DIMENSIONAL ELECTRON-GAS AT A MOLECULAR-BEAM EPITAXIAL-GROWN, SELECTIVELY DOPED, IN0.53GA0.47AS-IN0.48AL0.52AS INTERFACE [J].

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[9] TWO-DIMENSIONAL ELECTRON-GAS AT GAAS/GA0.52IN0.48P HETEROINTERFACE GROWN BY CHLORIDE VAPOR-PHASE EPITAXY [J].

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