EXTREMELY HIGH ELECTRON-MOBILITY IN A GAAS-GAXIN1-XP HETEROSTRUCTURE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：45

作者：

RAZEGHI, M ^{[1
]}

DEFOUR, M ^{[1
]}

OMNES, F ^{[1
]}

DOBERS, M ^{[1
]}

VIEREN, JP ^{[1
]}

GULDNER, Y ^{[1
]}

机构：

[1] ECOLE NORM SUPER,PHYS SOLIDES GRP,F-75231 PARIS 05,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 05期

关键词：

D O I：

10.1063/1.101851

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：457 / 459

页数：3

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共 18 条

[11] TRANSIENT AND PERSISTENT PHOTOCONDUCTIVITY IN N-ALXGA1-XAS AND SELECTIVELY DOPED N-ALXGA1-XAS/GAAS HETEROSTRUCTURES
SCHUBERT, EF
KNECHT, J
PLOOG, K
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (09): : L215 - L221
[12] SHALLOW AND DEEP DONORS IN DIRECT-GAP N-TYPE ALXGA1-XAS-SI GROWN BY MOLECULAR-BEAM EPITAXY
SCHUBERT, EF
PLOOG, K
[J]. PHYSICAL REVIEW B, 1984, 30 (12) : 7021 - 7029
[13] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE
STORMER, HL
DINGLE, R
GOSSARD, AC
WIEGMANN, W
STURGE, MD
[J]. SOLID STATE COMMUNICATIONS, 1979, 29 (10) : 705 - 709
[14] SELECTIVELY DOPED N-GAINP/GAAS HETEROSTRUCTURES GROWN BY MOCVD
TONE, K
NAKAYAMA, T
IECHI, H
OHTSU, K
KUKIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (06): : L429 - L431
[15] CYCLOTRON-RESONANCE LINEWIDTH IN SELECTIVELY DOPED GAAS-ALXGA1-XAS HETEROJUNCTIONS
VOISIN, P
GULDNER, Y
VIEREN, JP
VOOS, M
DELESCLUSE, P
LINH, NT
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (12) : 982 - 984
[16] VONKLITZING K, 1984, SPRINGER SERIES SOLI, V53, P242
[17] INTERFACE PROPERTIES FOR GAAS/INGAALP HETEROJUNCTIONS BY THE CAPACITANCE-VOLTAGE PROFILING TECHNIQUE
WATANABE, MO
OHBA, Y
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 906 - 908
[18] WEIMANN G, 1984, SPRINGER SERIES SOLI, V53, P88