TRANSIENT AND PERSISTENT PHOTOCONDUCTIVITY IN N-ALXGA1-XAS AND SELECTIVELY DOPED N-ALXGA1-XAS/GAAS HETEROSTRUCTURES

被引：26

作者：

SCHUBERT, EF

KNECHT, J

PLOOG, K

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1985年 / 18卷 / 09期

关键词：

D O I：

10.1088/0022-3719/18/9/007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L215 / L221

页数：7

共 9 条

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