TRANSIENT PHOTOCONDUCTIVITY IN SELECTIVELY DOPED N-TYPE ALXGA1-XAS/GAAS HETEROSTRUCTURES

被引：19

作者：

SCHUBERT, EF

PLOOG, K

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.29.4562

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：4562 / 4569

页数：8

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