CYCLOTRON-RESONANCE LINEWIDTH IN SELECTIVELY DOPED GAAS-ALXGA1-XAS HETEROJUNCTIONS

被引：47

作者：

VOISIN, P ^{[1
]}

GULDNER, Y ^{[1
]}

VIEREN, JP ^{[1
]}

VOOS, M ^{[1
]}

DELESCLUSE, P ^{[1
]}

LINH, NT ^{[1
]}

机构：

[1] CSF,LAB CENT RECH THOMSON,F-91401 ORSAY,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 12期

关键词：

D O I：

10.1063/1.92634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：982 / 984

页数：3

相关论文

共 14 条

[1] ABSTREITER G, 1976, PHYS REV B, V14, P2480, DOI 10.1103/PhysRevB.14.2480
[2] THEORY OF QUANTUM TRANSPORT IN A 2-DIMENSIONAL ELECTRON-SYSTEM UNDER MAGNETIC-FIELDS .1. CHARACTERISTICS OF LEVEL BROADENING AND TRANSPORT UNDER STRONG FIELDS
ANDO, T
UEMURA, Y
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 36 (04) : 959 - 967
[3] THEORY OF CYCLOTRON-RESONANCE LINESHAPE IN A 2-DIMENSIONAL ELECTRON-SYSTEM
ANDO, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 38 (04) : 989 - 997
[4] ANDO T, 1980, J PHYS SOC JPN, V48, P865
[5] BASTARD G, COMMUNICATION
[6] TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION
DELESCLUSE, P
LAVIRON, M
CHAPLART, J
DELAGEBEAUDEUF, D
LINH, NT
[J]. ELECTRONICS LETTERS, 1981, 17 (10) : 342 - 344
[7] DINGLE R, 1978, APPL PHYS LETT, V33, P655
[8] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS
DRESSELHAUS, G
KIP, AF
KITTEL, C
[J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384
[9] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT
STERN, F
HOWARD, WE
[J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &
[10] MAGNETOSPECTROSCOPY OF SHALLOW DONORS IN GAAS
STILLMAN, GE
WOLFE, CM
DIMMOCK, JO
[J]. SOLID STATE COMMUNICATIONS, 1969, 7 (13) : 921 - &