AVALANCHE BREAKDOWN VOLTAGE OF MULTIPLE EPITAXIAL PN JUNCTIONS

被引：6

作者：

SUNSHINE, RA ^{[1
]}

ASSOUR, J ^{[1
]}

机构：

[1] RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 04期

关键词：

D O I：

10.1016/0038-1101(73)90183-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：459 / &

共 8 条

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[6] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J].

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[7]

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[8] MEASUREMENT OF IONIZATION RATES IN DIFFUSED SILICON P-N JUNCTIONS [J].

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SOLID-STATE ELECTRONICS, 1970, 13 (05) :583-+

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