TIME-DEPENDENCE OF ZINC DIFFUSION IN GALLIUM ARSENIDE UNDER A CONCENTRATION GRADIENT

被引：37

作者：

TING, CH

PEARSON, GL

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 09期

关键词：

D O I：

10.1149/1.2408353

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1454 / &

共 15 条

[1] PRECIPITATES INDUCED IN GAAS BY IN-DIFFUSION OF ZINC [J].

BLACK, JF ;

JUNGBLUTH, ED .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) :181-+

[2] DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE [J].

CASEY, HC ;

PANISH, MB ;

CHANG, LL .

PHYSICAL REVIEW, 1967, 162 (03) :660-+

[3] DIFFUSION MECHANISM OF ZN IN GAAS + GAP BASED ON ISOCONCENTRATION DIFFUSION EXPERIMENTS [J].

CHANG, LL ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1960-&

[4] DIFFUSION OF ZINC IN GALLIUM ARSENIDE [J].

CUNNELL, FA ;

GOOCH, CH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) :127-133

[5] AN ANALYTICAL METHOD OF CALCULATING VARIABLE DIFFUSION COEFFICIENTS [J].

HALL, LD .

JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (01) :87-89

[6]

KENDALL DL, 1968, SEMICONDUCT SEMIMET, V4, P163

[7]

LANGINI RL, 1962, SOLID STATE ELECTRON, V5, P127

[8] DIFFUSION OF ZINC INTO GAAS [J].

MARUYAMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (05) :476-&

[9] ARSENIC-RICH REGION OF GA-AS-ZN TERNARY PHASE SYSTEM-MODIFICATION OF TERNARY DIAGRAM [J].

PANISH, MB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) :861-&

[10] DIFFUSION OF ZN IN 3-V SEMICONDUCTING COMPOUNDS [J].

SHAW, D ;

SHOWAN, SR .

PHYSICA STATUS SOLIDI, 1969, 32 (01) :109-&

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