DIFFUSION OF ZN IN 3-V SEMICONDUCTING COMPOUNDS

被引：19

作者：

SHAW, D

SHOWAN, SR

机构：

[1] Physics Department, University of Hull

来源：

PHYSICA STATUS SOLIDI | 1969年 / 32卷 / 01期

关键词：

D O I：

10.1002/pssb.19690320113

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The experimental results for chemical and isoconcentration diffusion of Zn in AlSb, GaAs, and GaP have been interpreted using Longini's interstitial/substitutional model. Satisfactory agreement is found with the isoconcentration data if the substitutional Zn is a fully ionized monovalent acceptor and the interstitial is a monovalent donor. The characteristic features of chemical diffusion are explained in terms of a non‐equilibrium situation dominated by the rate of supply of vacancies on the group III sub‐lattice and the flux of interstitial Zn donors. Diffusion‐induced dislocations are assumed to play a major role in the supply of vacancies. Satisfactory qualitative agreement with the chemical diffusion data is found. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：109 / &

共 22 条

[1] THE PREPARATION AND PROPERTIES OF ALUMINUM ANTIMONIDE [J].