SIMPLE MODEL FOR LAYERED GROWTH IN SMALL EPITAXIAL ISLANDS

被引：16

作者：

STOOP, LCA

VANDERME.JH

机构：

[1] UNIV S AFRICA,DEPT MATH & APPL MATH,PRETORIA,SOUTH AFRICA

[2] UNIV PRETORIA,DEPT PHYS,PRETORIA,SOUTH AFRICA

来源：

关键词：

D O I：

10.1016/0040-6090(73)90137-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：291 / 309

页数：19

共 16 条

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[7] Frenkel J., 1938, PHYS Z SOWJETUNION, V13, P1
[8] DEPENDENCE OF RESIDUAL STRAIN ON SIZE IN SMALL EPITAXIAL ISLANDS
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VANDERME.JH
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[9] ACCOMMODATION OF MISFIT ACROSS INTERFACE TEBWEEN CRYSTALS OF SEMICONDUCTING ELEMENTS OR COMPOUNDS
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