LOW-LOSS EXTENDED CAVITY LASERS BY DIELECTRIC CAP DISORDERING WITH A NOVEL MASKING TECHNIQUE

被引：4

作者：

BEAUVAIS, J ^{[1
]}

AYLING, SG ^{[1
]}

MARSH, JH ^{[1
]}

机构：

[1] UNIV GLASGOW,DEPT ELECTR & ELECT ENGN,GLASGOW G12 8QQ,SCOTLAND

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 04期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/68.212668

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-loss extended cavity lasers were fabricated in GaAs/AlGaAs quantum-well material using silica cap disordering and strontium fluoride selective area masking. Losses as low as 17 dBcm-1 were measured in the passive slab waveguide sections. Lasing action was achieved in devices with passive sections of up to 2 mm in length.

引用

页码：372 / 373

页数：2

共 9 条

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