CURRENT STATUS OF ION-IMPLANTATION FOR VLSI APPLICATIONS

被引：20

作者：

AKASAKA, Y

机构：

来源：

关键词：

D O I：

10.1016/0168-583X(89)90128-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：9 / 15

页数：7

共 14 条

[1]

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[2]

EIMORI T, 1987, 19TH C SOL STAT DEV, P27

[3]

Fuse G., 1988, 1988 Symposium on VLSI Technology. Digest of Technical Papers, P75

[4]

Hori T., 1988, 1988 Symposium on VLSI Technology. Digest of Technical Papers, P15

[5]

KATO H, 1987, ANN M JAPAN SOC APPL, P533

[6]

KUMAMOTO H, 1984, 26TH S SEM INT CIRC, P32

MAEYAMA, S ;

KAJIYAMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (05) :744-751

[8]

MATSUDA Y, 19TH C SOL STAT DEV

[9]

NATSUAKI N, 1985, 17TH C SOL STAT DEV, P325

[10]

OHSAKI S, 1986, 31ST P SEM INT CIRC, P97