NEW METHOD TO SUPPRESS ENCROACHMENT BY PLASMA-DEPOSITED BETA-PHASE TUNGSTEN NITRIDE THIN-FILMS

被引：26

作者：

KIM, YT

MIN, SK

机构：

[1] Semiconductor Materials Laboratory, Korea Institute of Science and Technology, 130-650, Cheongryang, Seoul

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 08期

关键词：

D O I：

10.1063/1.106304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tungsten nitride thin films are prepared with the WF6-NH3-H2 system by the plasma-enhanced chemical vapor deposition method. X-ray diffraction and Auger spectroscopy show that the crystal structure and the composition of tungsten nitride thin films grown at the WF6/NH3 ratio of 1 are beta-phase W2N. The resistivity of W2N is about 190-210-mu-OMEGA cm and it is demonstrated that severe encroachment and SiO2 etching during the low-pressure chemical vapor deposition of tungsten is remarkably suppressed by the predeposition of W2N.

引用

页码：929 / 931

页数：3

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