PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF LOW-RESISTIVE TUNGSTEN THIN-FILMS

被引：22

作者：

KIM, YT ^{[1
]}

MIN, SK ^{[1
]}

HONG, JS ^{[1
]}

KIM, CK ^{[1
]}

机构：

[1] KOREA ADV INST SCI & TECHNOL,DEPT ELECT ENGN,SEOUL 131,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 08期

关键词：

D O I：

10.1063/1.104505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Controlling the wafer temperatures from 200 to 500-degrees-C at H-2/WF6 flow ratio equal to 24, low-resistive (about 11-mu-OMEGA-cm) tungsten thin films are deposited by plasma-enhanced chemical vapor deposition. The as-deposited tungsten films have (110), (200), and (211) oriented bcc structures and Auger depth profile shows that fluorine and oxygen impurities are below the detection limit of Auger electron spectroscopy.

引用

页码：837 / 839

页数：3

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