PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF BETA-TUNGSTEN, A METASTABLE PHASE

被引：63

作者：

TANG, CC ^{[1
]}

HESS, DW ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT CHEM ENGN,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 06期

关键词：

D O I：

10.1063/1.95337

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：633 / 635

页数：3

共 17 条

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[4]

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[8] ION SURFACE INTERACTIONS DURING VAPOR-PHASE CRYSTAL-GROWTH BY SPUTTERING, MBE, AND PLASMA-ENHANCED CVD - APPLICATIONS TO SEMICONDUCTORS [J].

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[9]

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[10]

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