DIRECT TUNGSTEN ON SILICON DIOXIDE FORMED BY RF PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：5

作者：

WONG, M

SARASWAT, KC

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 11期

关键词：

D O I：

10.1109/55.9283

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：582 / 584

页数：3

共 11 条

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[6]

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[7] TASI2 GATE FOR VLSI CMOS CIRCUITS [J].

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[8] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF BETA-TUNGSTEN, A METASTABLE PHASE [J].

TANG, CC ;

HESS, DW .

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[9]

TSUZUKU S, 1986, OCT FALL M EL SOC, V86, P500

[10]

WRIGHT PJ, 1987, IEDM TECH DIG, P574

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