TASI2 GATE FOR VLSI CMOS CIRCUITS

被引：8

作者：

SCHWABE, U

NEPPL, F

JACOBS, EP

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 07期

关键词：

D O I：

10.1109/T-ED.1984.21643

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：988 / 992

页数：5

共 14 条

[1]

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[2]

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[4]

JACOBS EP, 1983, ESSDERC 83 F, V7, P61

[5] PROPERTIES OF EVAPORATED AND SPUTTERED TASI2 FILMS AND THE INFLUENCE OF THE RESIDUAL-GAS COMPOSITION [J].

NEPPL, F ;

SCHWABE, U .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :508-511

[6]

OPPOLZER H, 1983, MAT RES SOC S P, V13

[7]

PARILLO LC, 1982, IEDM, V29, P706

[8] N-WELL AND P-WELL OPTIMIZATION FOR HIGH-SPEED N-EPITAXY CMOS CIRCUITS [J].

SCHWABE, U ;

HERBST, H ;

JACOBS, EP ;

TAKACS, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) :1339-1344

[9] REFRACTORY-METAL SILICIDES FOR VLSI APPLICATIONS [J].

SINHA, AK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :778-785

[10]

Sze S. M., 1981, PHYSICS SEMICONDUCTO, P251

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