PROPERTIES OF EVAPORATED AND SPUTTERED TASI2 FILMS AND THE INFLUENCE OF THE RESIDUAL-GAS COMPOSITION

被引：29

作者：

NEPPL, F

SCHWABE, U

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 04期

关键词：

D O I：

10.1109/T-ED.1982.20734

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：508 / 511

页数：4

共 9 条

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1417-1424

[3]

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[6] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1409-1417

[7] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].

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[8]

NEPPL F, UNPUB PROPERTIES MO

[9]

853 STAND DIFFR POWD

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