WSIO.11 SCHOTTKY GATES FOR GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：28

作者：

CALLEGARI, A ^{[1
]}

SPIERS, GD ^{[1
]}

MAGERLEIN, JH ^{[1
]}

GUTHRIE, HC ^{[1
]}

机构：

[1] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.338004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2054 / 2058

页数：5

相关论文

共 30 条

[1] ANDERSON CE, UNPUB
[2] ANDERSON CJ, 1986, TECHNICAL DIGEST GAA
[3] GROWTH OF MOLYBDENUM AND TUNGSTEN ON GAAS IN A MOLECULAR-BEAM EPITAXY SYSTEM
BLOCH, J
HEIBLUM, M
KOMEM, Y
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (11) : 1092 - 1094
[4] BRASLAU N, UNPUB
[5] DOPING DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT OF TI-PT CONTACTS TO N-GALLIUM ARSENIDE
BROOM, RF
MEIER, HP
WALTER, W
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1832 - 1833
[6] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES
COWLEY, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3024 - &
[7] TIW SILICIDE-GATE TECHNOLOGY FOR SELF-ALIGNED GAAS-FET
GILL, SS
PRYCE, GJ
WOODWARD, J
[J]. PHYSICA B & C, 1985, 129 (1-3): : 430 - 434
[8] A GAAS 16-KBIT STATIC RAM USING DISLOCATION-FREE CRYSTAL
HIRAYAMA, M
TOGASHI, M
KATO, N
SUZUKI, M
MATSUOKA, Y
KAWASAKI, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) : 104 - 110
[9] CAPACITANCE VOLTAGE CHARACTERIZATION OF SILICIDE GAAS SCHOTTKY CONTACTS
JACKSON, TN
DEGELORMO, JF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06): : 1676 - 1679
[10] KAO JC, 1985, STATE ART PROGRAM CO