TIW SILICIDE-GATE TECHNOLOGY FOR SELF-ALIGNED GAAS-FET

[1] ANDERSON WT, 1983, P MATERIALS RES SOC, V18, P57

[2] GILL SS, 1983, DEC C GALL ARS INT C

[3] KOHN E, 1979, IEDM, P775

[4] CHARACTERIZATION OF WSIX/GAAS SCHOTTKY CONTACTS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 600 - 602

[5] HIGH-SPEED LOGIC AT 300-K WITH SELF-ALIGNED SUBMICROMETER-GATE GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 215 - 217

[6] Sze S. M., 1981, PHYSICS SEMICONDUCTO, p[279, 245]

[7] SELF-ALIGN IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) FOR HIGH-SPEED GAAS ICS [J]. ELECTRONICS LETTERS, 1982, 18 (03) : 119 - 121

[8] A GAAS 1K STATIC RAM USING TUNGSTEN SILICIDE GATE SELF-ALIGNED TECHNOLOGY [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (05) : 520 - 524

[9] TIW SILICIDE GATE SELF-ALIGNMENT TECHNOLOGY FOR ULTRAHIGH-SPEED GAAS-MESFET LSI VLSIS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1541 - 1547

[1] ANDERSON WT, 1983, P MATERIALS RES SOC, V18, P57

[2] GILL SS, 1983, DEC C GALL ARS INT C

[3] KOHN E, 1979, IEDM, P775

[4] CHARACTERIZATION OF WSIX/GAAS SCHOTTKY CONTACTS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 600 - 602

[5] HIGH-SPEED LOGIC AT 300-K WITH SELF-ALIGNED SUBMICROMETER-GATE GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 215 - 217

[6] Sze S. M., 1981, PHYSICS SEMICONDUCTO, p[279, 245]

[7] SELF-ALIGN IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) FOR HIGH-SPEED GAAS ICS [J]. ELECTRONICS LETTERS, 1982, 18 (03) : 119 - 121

[8] A GAAS 1K STATIC RAM USING TUNGSTEN SILICIDE GATE SELF-ALIGNED TECHNOLOGY [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (05) : 520 - 524

[9] TIW SILICIDE GATE SELF-ALIGNMENT TECHNOLOGY FOR ULTRAHIGH-SPEED GAAS-MESFET LSI VLSIS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1541 - 1547