SLOW CRACK-GROWTH OF CVD DIAMOND

被引:3
作者
DRORY, MD
GARDINIER, CF
机构
[1] Crystallume, Menlo Park, California 94025
关键词
D O I
10.1557/JMR.1992.0781
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Slow crack growth in CVD diamond has been observed from indentation experiments. Diamond films of 400-mu-m thickness were prepared by plasma-enhanced CVD on a silicon substrate, subsequently removed from the substrate, and polished for indentation testing. A microhardness tester was used to produce Vickers indentations under low load. Crack length measurements over time revealed susceptibility to slow crack growth in ambient testing conditions. The stress-corrosion susceptibility coefficient, N, was measured as 9.3.
引用
收藏
页码:781 / 783
页数:3
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