NEW EVIDENCE OF SMALL LATTICE-RELAXATION FOR THE DX CENTER IN AL-CHI-GA1-CHI-AS

被引：10

作者：

TALWAR, DN

MANASREH, MO

SUH, KS

COVINGTON, BC

机构：

[1] SYSTRAN CORP,DAYTON,OH 45432

[2] SAM HOUSTON STATE UNIV,DEPT PHYS,HUNTSVILLE,TX 77341

[3] UNIV HOUSTON,DEPT PHYS,HOUSTON,TX 77004

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 17期

关键词：

D O I：

10.1063/1.98678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1358 / 1360

页数：3

共 29 条

[1]

[Anonymous], ELECTRONIC STRUCTURE

[2] PRESSURE-DEPENDENCE OF THE ELECTRON-CAPTURE CROSS-SECTION OF THE B-HOLE TRAP IN LIQUID-PHASE EPITAXIAL GALLIUM-ARSENIDE [J].

BARNES, CE ;

SAMARA, GA .

APPLIED PHYSICS LETTERS, 1983, 43 (07) :677-679

[3] NUCLEAR-MAGNETIC-RESONANCE MEASUREMENTS OF LATTICE-DISTORTIONS IN GAAS-IN [J].

CARLOS, WE ;

BISHOP, SG ;

TREACY, DJ .

APPLIED PHYSICS LETTERS, 1986, 49 (09) :528-530

[4] NEW MODEL OF DEEP DONOR CENTRES IN AlxGa1 - xAs. [J].

Henning, J.C.M. ;

Ansems, J.P.M. .

Semiconductor Science and Technology, 1987, 2 (01) :1-13

[5]

Henning J. C. M., 1986, Materials Science Forum, V10-12, P429, DOI 10.4028/www.scientific.net/MSF.10-12.429

[6]

HENNING JP, COMMUNICATION

[7] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].

HENRY, CH ;

LANG, DV .

PHYSICAL REVIEW B, 1977, 15 (02) :989-1016

[8] DEEP DONOR MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY EFFECT [J].

HJALMARSON, HP ;

DRUMMOND, TJ .

APPLIED PHYSICS LETTERS, 1986, 48 (10) :656-658

[9] INFLUENCE OF MBE GROWTH-CONDITIONS ON PERSISTENT PHOTOCONDUCTIVITY EFFECTS IN N-ALGAAS AND SELECTIVELY DOPED GAAS/ALGAAS HETEROSTRUCTURES [J].

ISHIKAWA, T ;

KONDO, K ;

HIYAMIZU, S ;

SHIBATOMI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06) :L408-L410

[10]

JAROS M, 1978, PHYS REV B, V16, P3694

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