NOVEL PHOTOVOLTAIC DELTA-DOPED GAAS SUPERLATTICE STRUCTURE

被引：13

作者：

GLASS, AM ^{[1
]}

SCHUBERT, EF ^{[1
]}

WILSON, BA ^{[1
]}

BONNER, CE ^{[1
]}

CUNNINGHAM, JE ^{[1
]}

OLSON, DH ^{[1
]}

JAN, W ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 22期

关键词：

D O I：

10.1063/1.101138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2247 / 2249

页数：3

共 9 条

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[7] COMPOSITIONAL AND DOPING SUPER-LATTICES IN III-V-SEMICONDUCTORS [J].

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[8]

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[9] QUANTUM-CONFINED INTERBAND ABSORPTION IN GAAS SAWTOOTH-DOPING SUPERLATTICES [J].

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