SILICON PRESSURE SENSOR INTEGRATES RESONANT STRAIN-GAUGE ON DIAPHRAGM

被引：85

作者：

IKEDA, K

KUWAYAMA, H

KOBAYASHI, T

WATANABE, T

NISHIKAWA, T

YOSHIDA, T

HARADA, K

机构：

[1] Corporate R, D Department 3, Yokogawa Electric Corporation, Musashino-shi, Tokyo, 180

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 21卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(90)85028-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel silicon pressure sensor has been developed which will enable high-precision pressure measurement. The sensor, which is based on a new concept, is fabricated from a single silicon crystal and has two resonant strain gauges which are held in vacuum cavities on the surface of the diaphragm to isolate them from the surrounding fluid. The two oscillating frequencies of the resonant strain gauges are differentially modulated by pressure. The sensor's measuring principle, features, its amplitude-controlled self-oscillation circuit, and the results of experiments are given. © 1990.

引用

页码：146 / 150

页数：5

共 9 条

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