ELECTRONIC-STRUCTURES OF (GAAS)1/(GE2)1 SUPERLATTICES

被引：10

作者：

OHNO, T

机构：

[1] NTT Basic Research Laboratories, Musashino-shi, Tokyo

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 74卷 / 01期

关键词：

D O I：

10.1016/0038-1098(90)90199-L

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electronic structures of (001)- and (111)-oriented (GaAs)1/(Ge2)1 superlattices are calculated using the ab initio self-consistent pseudopotential method. It is found that the (001) superlattice has a metallic character while the (111) superlattice is a semiconductor. The metallic character comes from AsGe bonds, which do not exist in ordinary III-V superlattices. © 1990.

引用

页码：7 / 9

页数：3

共 8 条

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