ZINCBLENDE DIAMOND ORDER-DISORDER TRANSITION IN METASTABLE CRYSTALLINE (GAAS)1-XGE2X ALLOYS

被引:169
作者
NEWMAN, KE
DOW, JD
机构
来源
PHYSICAL REVIEW B | 1983年 / 27卷 / 12期
关键词
D O I
10.1103/PhysRevB.27.7495
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:7495 / 7508
页数:14
相关论文
共 31 条
[1]  
[Anonymous], ELECTRONIC STRUCTURE
[2]   GROWTH AND OPTICAL-PROPERTIES OF SINGLE-CRYSTAL METASTABLE (GAAS)1-XGEX ALLOYS [J].
BARNETT, SA ;
RAY, MA ;
LASTRAS, A ;
KRAMER, B ;
GREENE, JE ;
RACCAH, PM ;
ABELS, LL .
ELECTRONICS LETTERS, 1982, 18 (20) :891-892
[3]   BLUME-EMERY-GRIFFITHS-POTTS MODEL IN 2 DIMENSIONS - PHASE-DIAGRAM AND CRITICAL PROPERTIES FROM A POSITION-SPACE RENORMALIZATION GROUP [J].
BERKER, AN ;
WORTIS, M .
PHYSICAL REVIEW B, 1976, 14 (11) :4946-4963
[4]   ISING MODEL FOR LAMBDA TRANSITION AND PHASE SEPARATION IN HE-3-HE-4 MIXTURES [J].
BLUME, M ;
EMERGY, VJ ;
GRIFFITHS, RB .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1971, 4 (03) :1071-+
[5]   SINGLE-PHASE POLYCRYSTALLINE METASTABLE (GASB)1-XGEX ALLOYS FROM ANNEALING OF AMORPHOUS MIXTURES - ION MIXING EFFECTS DURING DEPOSITION [J].
CADIEN, KC ;
GREENE, JE .
APPLIED PHYSICS LETTERS, 1982, 40 (04) :329-331
[6]   GROWTH OF SINGLE-CRYSTAL METASTABLE SEMICONDUCTING (GASB)1-XGEX FILMS [J].
CADIEN, KC ;
ELTOUKHY, AH ;
GREENE, JE .
APPLIED PHYSICS LETTERS, 1981, 38 (10) :773-775
[7]   GROWTH AND THERMAL-STABILITY OF SINGLE-CRYSTAL METASTABLE SEMICONDUCTING (GASB)1-XGEX FILMS [J].
CADIEN, KC ;
ELTOUKHY, AH ;
GREENE, JE .
VACUUM, 1981, 31 (06) :253-258
[8]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[9]  
FALK H, 1970, AM J PHYS, V30, P858
[10]   SEMICONDUCTOR CRYSTAL-GROWTH BY SPUTTER DEPOSITION [J].
GREENE, JE ;
ELTOUKHY, AH .
SURFACE AND INTERFACE ANALYSIS, 1981, 3 (01) :34-54