Investigation of Preparation Conditions and Microstructure of Mn-N Films by Reactive Sputtering

被引:1
作者
Chiba, Masafumi [1 ]
Naito, Shinya [1 ]
机构
[1] Tokai Univ, Sch High Technol Human Welf, Dept Mat Chem, 317 Nishino, Numazu, Shizuoka 4100395, Japan
来源
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2008年 / 6卷
关键词
Sputter deposition; Manganese; Nitrides; Polycrystalline thin films; Magnetic films;
D O I
10.1380/ejssnt.2008.115
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The crystal structure of manganese nitride material depends on the chemical composition. In this paper, we report the crystal structure of manganese nitride which depends on the deposition condition of a flow ratio of argon and nitrogen, F-N { = N-2 = (Ar + N-2)}. The samples were fabricated by an RF-sputtering method. Argon and nitrogen were used as a reactive sputtering gas. The crystal structure of the obtained films was analyzed by X-ray diffraction (XRD) measurements. The stoichiometry of the film under F-N = 5-100 % was evaluated as Mn3N2. The lattice spacing d of (101) expands as the nitrogen flow ratio increases. In the case of F-N = 1 %, the composition was evaluated as Mn4N.
引用
收藏
页码:115 / 118
页数:4
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