MULTIMESA VERSUS ANNULAR CONSTRUCTION FOR HIGH AVERAGE POWER IN SEMICONDUCTOR DEVICES

被引：16

作者：

FREY, J

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1972.17528

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：981 / &

共 6 条

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MISAWA, T
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (11) : 1007 - &
[3] SPREADING RESISTANCE IN CYLINDRICAL SEMICONDUCTOR DEVICES
KENNEDY, DP
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) : 1490 - 1497
[4] RING-GEOMETRY IMPATT OSCILLATOR DIODES
MARINACC.LP
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09): : 1588 - +
[5] RILEY TJ, 1968, I ELEC ENG S GALLIUM
[6] YU SP, 1971, ELECTRON LETT, V7