BOUNDARY CONDITIONS FOR SPACE-CHARGE REGION OF A P-N-JUNCTION

被引：19

作者：

NUSSBAUM, A

机构：

[1] Electrical Engineering Department, University of Minnesota, Minneapolis

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 03期

关键词：

D O I：

10.1016/0038-1101(69)90029-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The purpose of this paper is to show that the controversy concerning the relation of the applied potential difference to the difference across the space-charge region of a P-N-junction is due to a neglect of the non-zero gradients of the electrochemical potentials. By incorporating these quantities and by a suitable modification of the Fletcher boundary conditions, the inconsistencies discovered by Van Vliet and Gummel can be removed. © 1969.

引用

页码：177 / &

共 8 条

[1] Callen H.B., 1960, THERMODYNAMICS INTRO
[2] Fletcher N.H., 1957, J ELECT, V2, P609, DOI [10.1080/00207215708937064, DOI 10.1080/00207215708937064]
[3] HOLE-ELECTRON PRODUCT OF PN JUNCTIONS
GUMMEL, HK
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 209 - &
[4] SOME REMARKS ON HIGH INJECTION THEORIES OF P-N JUNCTION IN CHARGE NEUTRALITY APPROXIMATION
HAZMAN, S
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 269 - &
[5] COMMENTS ON HIGH INJECTION THEORIES OF P-N JUNCTION
NORDMAN, JE
VANVLIET, KM
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 263 - &
[6] NUSSBAUM A, 1961, SEMICONDUCTOR DEVICE
[7] Shockley W., 1952, PHYS TODAY, V5, P18, DOI DOI 10.1063/1.3067420
[8] HIGH INJECTION THEORIES OF P-N JUNCTION IN CHARGE NEUTRALITY APPROXIMATION
VANVLIET, KM
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (03) : 185 - &

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