TEMPERATURE DEPENDENCE OF RAMAN SCATTERING IN SILICON

被引：502

作者：

HART, TR

AGGARWAL, RL

LAX, B

机构：

来源：

PHYSICAL REVIEW B-SOLID STATE | 1970年 / 1卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.1.638

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 [凝聚态物理];

摘要：

引用

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页码：638 / &

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