DEPTH PROFILE OF ANTIMONY IMPLANTED INTO DIAMOND

被引：8

作者：

BRAUNSTEIN, G ^{[1
]}

BERNSTEIN, T ^{[1
]}

CARSENTY, U ^{[1
]}

KALISH, R ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,HAIFA,ISRAEL

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 09期

关键词：

D O I：

10.1063/1.326710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The depth profiles of 350-keV 121Sb ions implanted at room temperature into diamonds were determined from neutron-activation-layer-removal experiments. Profiles for both random and aligned (〈111〉) implantations were measured. The distribution of antimony ions implanted under channeling conditions was found to be centered somewhat deeper in the crystal than that of Sb ions implanted into a nonaligned diamond. The distribution tail extends in the case of channel implantation far into the crystal, well beyond the region of measurable damage.

引用

页码：5731 / 5735

页数：5

共 8 条

[1]

BERTRAND FE, 1972, NUCL DATA SHEETS, V7

[2]

BRAUNSTEIN G, UNPUBLISHED

[3] IMPLANTATION PROFILES OF 32P CHANNELED INTO SILICON CRYSTALS [J].

DEARNALEY, G ;

FREEMAN, JH ;

GARD, GA ;

WILKINS, MA .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :587-+

[4]

Gibbons J.F., 1975, PROJECTED RANGE STAT, V2nd

[5]

KALISH R, UNPUBLISHED

[6]

TALMI A, DEFECTS RAD EFFECTS

[7] SUBTHRESHOLD RADIATION EFFECTS IN SEMICONDUCTORS [J].

VAVILOV, VS ;

KIV, AE ;

NIYAZOVA, OR .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (01) :11-33

[8]

Winterbon K.B., 1975, ION IMPLANTATION RAN, V1st

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