SYNTHESIS OF METASTABLE EPITAXIAL ZINC-BLENDE-STRUCTURE AIN BY SOLID-STATE REACTION

被引：176

作者：

PETROV, I

MOJAB, E

POWELL, RC

GREENE, JE

HULTMAN, L

SUNDGREN, JE

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,BIOL CHEM RES LAB,URBANA,IL 61801

[3] LINKOPING UNIV,DIV THIN FILM,S-58183 LINKOPING,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 20期

关键词：

D O I：

10.1063/1.106943

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial metastable zinc-blende-structure beta-AIN was synthesized by the solid-state reaction between single-crystal Al(001) and TiN(001) layers grown on MgO(001) by ultrahigh vacuum magnetron sputter deposition. At an annealing temperature T(a) = 600-degrees-C, the interaction proceeded according to the following overall reaction: 4Al + TiN --> Al3Ti + AlN, in which beta-AlN was formed pseudomorphically between cubic TiN and tetragonal Al3Ti layers. The lattice constant of beta-AlN was found to be 0.438 nm, which corresponds to a 3.3% lattice mismatch with the underlying TiN layer.

引用

页码：2491 / 2493

页数：3

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