POLARIZED ELECTROLUMINESCENCE SPECTRA OF GAXIN1-XP/(AL0.6GA0.4)0.5IN0.5P QUANTUM-WELLS

被引：3

作者：

BOUR, DP ^{[1
]}

PAOLI, TL ^{[1
]}

THORNTON, RL ^{[1
]}

TREAT, DW ^{[1
]}

PARK, YS ^{[1
]}

ZORY, PS ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,PHOTON RES LAB,GAINESVILLE,FL 32611

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 26期

关键词：

D O I：

10.1063/1.109048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electroluminescence spectra of 80 angstrom GaxIn1-xP/(Al0.6Ga0.4)0.5In0.5P quantum wells (QWs), with x = 0.3, 0.4, 0.5, and 0.6, are examined. The polarization is anisotropic, and the light-hole (1h) and heavy-hole (hh) transitions are resolved at current densities between 1 A/cm2 and threshold. In the compressively strained (x = 0.3, 0.4) QWs, the hh is ground state and transverse electric-mode emission dominates. The Ih and hh band edges are reversed for the tensile-strained QW, however, and the emission is predominantly transverse magnetic. Near threshold, the bandfilling effect is most pronounced in the compressively strained QWs, suggesting a reduced in-plane hh effective mass. For the most highly compressed QW (x = 0.3, lambda = 707 nm), the threshold current density is 190 A/cm2.

引用

页码：3458 / 3460

页数：3

共 13 条

[1] INVESTIGATION OF TE AND TM POLARIZED LASER-EMISSION IN GAINP/ALGAINP LASERS BY GROWTH-CONTROLLED STRAIN [J].

BOERMANS, MJB ;

HAGEN, SH ;

VALSTER, A ;

FINKE, MN ;

VANDERHEYDEN, JMM .

ELECTRONICS LETTERS, 1990, 26 (18) :1438-1439

[2] LOW THRESHOLD GAXIN1-XP(ALYGA1-Y)0.5IN0.5P STRAINED QUANTUM-WELL LASERS [J].

BOUR, DP ;

TREAT, DW ;

THORNTON, RL ;

PAOLI, TL ;

BRINGANS, RD ;

KRUSOR, BS ;

GEELS, RS ;

WELCH, DF ;

WANG, TY .

JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :751-756

[3] LOW THRESHOLD, 633 NM, SINGLE TENSILE-STRAINED QUANTUM-WELL GA0.6IN0.4P/(ALXGA1-X)0.5IN0.5P LASER [J].

BOUR, DP ;

TREAT, DW ;

THORNTON, RL ;

PAOLI, TL ;

BRINGANS, RD ;

KRUSOR, BS ;

GEELS, RS ;

WELCH, DF ;

WANG, TY .

APPLIED PHYSICS LETTERS, 1992, 60 (16) :1927-1929

[4] A MODEL FOR GRIN-SCH-SQW DIODE-LASERS [J].

CHINN, SR ;

ZORY, PS ;

REISINGER, AR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (11) :2191-2214

[5] LOW THRESHOLD CURRENT AND HIGH DIFFERENTIAL GAIN IN IDEAL TENSILE-STRAINED AND COMPRESSIVE-STRAINED QUANTUM-WELL LASERS [J].

GHITI, A ;

SILVER, M ;

OREILLY, EP .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (09) :4626-4628

[6] MOVPE GROWTH AND OPTICAL-PROPERTIES OF ALGAINP/GAINP STRAINED SINGLE QUANTUM-WELL STRUCTURES [J].

KONDO, M ;

DOMEN, K ;

ANAYAMA, C ;

TANAHASHI, T ;

NAKAJIMA, K .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :578-582

[7]

MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/S0022-0248(74)80055-2

[8] IMPROVED PERFORMANCE DUE TO SUPPRESSION OF SPONTANEOUS EMISSION IN TENSILE-STRAIN SEMICONDUCTOR-LASERS [J].

OREILLY, EP ;

JONES, G ;

GHITI, A ;

ADAMS, AR .

ELECTRONICS LETTERS, 1991, 27 (16) :1417-1419

[9] PHOTOREFLECTANCE STUDY OF NARROW-WELL STRAINED-LAYER INXGA1-XAS/GAAS COUPLED MULTIPLE-QUANTUM-WELL STRUCTURES [J].

PAN, SH ;

SHEN, H ;

HANG, Z ;

POLLAK, FH ;

ZHUANG, WH ;

XU, Q ;

ROTH, AP ;

MASUT, RA ;

LACELLE, C ;

MORRIS, D .

PHYSICAL REVIEW B, 1988, 38 (05) :3375-3382

[10] HIGH-PERFORMANCE 1.5 MICRO-M WAVELENGTH INGAAS-INGAASP STRAINED QUANTUM-WELL LASERS AND AMPLIFIERS [J].

THIJS, PJA ;

TIEMEIJER, LF ;

KUINDERSMA, PI ;

BINSMA, JJM ;

VANDONGEN, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1426-1439

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