ELECTRICAL-RESISTIVITY OF NANOCRYSTALLINE PBS GROWN IN A POLYMER MATRIX

被引：60

作者：

MUKHERJEE, M

DATTA, A

CHAKRAVORTY, D

机构：

[1] Indian Association for the Cultivation of Science, Jadavpur

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 09期

关键词：

D O I：

10.1063/1.110838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

PbS particles of average diameters ranging from 9.9 to 18.0 nm have been synthesized wit in a polyacrylamide matrix. The percolative chains of these particles exhibit intrinsic semiconducting behavior at temperatures higher than 340 K. The estimated band gap for these particles are found to be much higher than that of bulk PbS being in the range 1.03 to 1.49 eV. The low-temperature conductivity of these composites appears to be controlled by an electron tunneling mechanism.

引用

页码：1159 / 1161

页数：3