SPATIAL DISTRIBUTIONS OF DENSELY CONTACT-ELECTRIFIED CHARGES ON A THIN SILICON-OXIDE

被引：9

作者：

SUGAWARA, Y ^{[1
]}

MORITA, S ^{[1
]}

FUKANO, Y ^{[1
]}

UCHIHASHI, T ^{[1
]}

OKUSAKO, T ^{[1
]}

CHAYAHARA, A ^{[1
]}

YAMANISHI, Y ^{[1
]}

OASA, T ^{[1
]}

机构：

[1] SUMITOMO MET IND LTD, ADV TECHNOL RES LABS, AMAGASAKI, HYOGO 660, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 1A期

关键词：

CONTACT ELECTRIFICATION; CHARGE DEPOSITION; CHARGE DISSIPATION; DENSELY ELECTRIFIED SURFACE; SILICON OXIDE SURFACE; ATOMIC FORCE MICROSCOPE; SCANNING FORCE MICROSCOPE; TUNNELING PROCESS; SPATIAL DISTRIBUTION; DIELECTRIC BREAKDOWN;

D O I：

10.1143/JJAP.33.L74

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The spatial distributions of densely contact-electrified charges on silicon oxide were investigated in air with an atomic force microscope. We found that the spatial distributions immediately after contact electrification significantly depended on the sign of the charge. The spatial distributions showed sharp peaks for positive charge but round peaks for negative charge. We conjectured that the sign dependence of the spatial distributions was induced by the forced tunneling process. We also found the other feature of the spatial distributions of the dissipated charge, which seemed to be related to premonitory phenomena of dielectric breakdown for silicon oxide.

引用

页码：L74 / L77

页数：4

共 5 条

[1] STABLE-UNSTABLE PHASE-TRANSITION OF DENSELY CONTRACT-ELECTRIFIED ELECTRONS ON THIN SILICON-OXIDE [J].

MORITA, S ;

SUGAWARA, Y ;

FUKANO, Y ;

UCHIHASHI, T ;

OKUSAKO, T ;

CHAYAHARA, A ;

YAMANISHI, Y ;

OASA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (12B) :L1852-L1854

[2] ATOMIC-FORCE MICROSCOPE COMBINED WITH SCANNING TUNNELING MICROSCOPE [AFM/STM] [J].

MORITA, S ;

SUGAWARA, Y ;

FUKANO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (6B) :2983-2988

[3] REPRODUCIBLE AND CONTROLLABLE CONTACT ELECTRIFICATION ON A THIN INSULATOR [J].

MORITA, S ;

FUKANO, Y ;

UCHIHASHI, T ;

OKUSAKO, T ;

SUGAWARA, Y ;

YAMANISHI, Y ;

OASA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (11B) :L1701-L1703

[4]

MORITA S, 1993, IN PRESS APPL SURF S

[5] SPATIAL-DISTRIBUTION AND ITS PHASE-TRANSITION OF DENSELY CONTACT-ELECTRIFIED ELECTRONS ON A THIN SILICON-OXIDE [J].

SUGAWARA, Y ;

MORITA, S ;

FUKANO, Y ;

UCHIHASHI, T ;

OKUSAKO, T ;

CHAYAHARA, A ;

YAMANISHI, Y ;

OASA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (1A) :L70-L73

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