INVESTIGATION OF INTRINSIC UNOCCUPIED SURFACE-STATES AT GAAS(110) BY ISOCHROMAT SPECTROSCOPY

被引：58

作者：

DOSE, V

GOSSMANN, HJ

STRAUB, D

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.47.608

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：608 / 610

页数：3

共 13 条

[1] SURFACE-STRUCTURE AND ORBITAL SYMMETRIES OF (110) SURFACE-STATES OF GAAS
CHADI, DJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 631 - 636
[2] CHADI DJ, COMMUNICATION
[3] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
CHELIKOWSKY, JR
COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582
[4] ISOCHROMAT SPECTROSCOPY USING SXAPS EQUIPMENT
CONRAD, M
DOSE, V
FAUSTER, T
SCHEIDT, H
[J]. APPLIED PHYSICS, 1979, 20 (01): : 37 - 40
[5] VUV ISOCHROMAT SPECTROSCOPY
DOSE, V
[J]. APPLIED PHYSICS, 1977, 14 (01): : 117 - 118
[6] PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110)
EASTMAN, DE
FREEOUF, JL
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (27) : 1601 - 1605
[7] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[8] EVIDENCE FOR SUBSURFACE ATOMIC DISPLACEMENTS OF GAAS(110) SURFACE FROM LEED/CMTA ANALYSIS
KAHN, A
CISNEROS, G
BONN, M
MARK, P
DUKE, CB
[J]. SURFACE SCIENCE, 1978, 71 (02) : 387 - 396
[9] GAAS SURFACE-STATES OBSERVED BY X-RAY PHOTOEMISSION
LUDEKE, R
LEY, L
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1300 - 1301
[10] NEW PROBE FOR UNOCCUPIED BANDS AT SURFACES
PENDRY, JB
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (16) : 1356 - 1358