HYDROGEN ISOTOPE TRAPPING IN MATERIALS EXPOSED IN PLT

被引：24

作者：

WAMPLER, WR

PICRAUX, ST

COHEN, SA

DYLLA, HF

MCCRACKEN, GM

ROSSNAGEL, SM

MAGEE, CW

机构：

[1] PRINCETON UNIV,PLASMA PHYS LAB,PRINCETON,NJ 08544

[2] RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

来源：

JOURNAL OF NUCLEAR MATERIALS | 1979年 / 85-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3115(79)90389-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Samples exposed at various minor radii in PLT to small numbers of high power discharges have been analyzed for the amount and depth distribution of implanted hydrogen isotopes and higher Z impurities. Comparisons of the measured H,D concentrations and depth profiles with laboratory implantations and calculated depth profiles give the energy and fluence of the hydrogen implanted in the PLT samples. For a Maxwellian distribution, characteristic temperatures of 500 to 600eV due to plasma charge exchange, and 50 to 350eV due to ions at the plasma edge are obtained. Also a 5-40keV component is observed due to neutral beam injection. © 1979.

引用

页码：983 / 987

页数：5

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