STRESS-RELIEVED REGROWTH OF SILICON ON SAPPHIRE BY LASER ANNEALING

被引：35

作者：

SAIHALASZ, GA

FANG, FF

SEDGWICK, TO

SEGMULLER, A

机构：

来源：

关键词：

D O I：

10.1063/1.91523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：419 / 422

页数：4

共 6 条

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[2]

FANG FF, UNPUBLISHED

[3]

FRIDMAN YB, 1964, STRENGTH DEFORMATION

[4]

HYNECEK J, 1974, J APPL PHYS, V45, P2631, DOI 10.1063/1.1663642

[5]

MAYER JW, 1979, APPL PHYS LETT, V34, P76

[6] PHYSICS AND DEVICE TECHNOLOGY OF SILICON ON SAPPHIRE [J].

NISHI, Y ;

HARA, H .