PHYSICS AND DEVICE TECHNOLOGY OF SILICON ON SAPPHIRE

被引：17

作者：

NISHI, Y

HARA, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷

关键词：

D O I：

10.7567/JJAPS.17S1.27

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：27 / 35

页数：9

共 20 条

[1] MISFIT DISLOCATIONS IN HETEROEPITAXIAL SI ON SAPPHIRE [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ ;

CORBOY, JF ;

CULLEN, GW .

APPLIED PHYSICS LETTERS, 1976, 28 (05) :275-277

[2]

EERNISSE EP, 1973, SOLID STATE ELECTRON, V16, P315, DOI 10.1016/0038-1101(73)90004-X

[3] INVESTIGATION OF CARRIER TRANSPORT IN THIN SILICON-ON-SAPPHIRE FILMS USING MIS DEEP DEPLETION HALL-EFFECT STRUCTURES [J].

ELLIOT, ABM ;

ANDERSON, JC .

SOLID-STATE ELECTRONICS, 1972, 15 (05) :531-+

[4] INVESTIGATION OF SILICON-SAPPHIRE INTERFACE USING MIS CAPACITANCE METHOD [J].

GOODMAN, AM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (02) :63-65

[5] DONOR SURFACE STATES AND BULK ACCEPTOR TRAPS IN SILICON-ON-SAPPHIRE FILMS [J].

HEIMAN, FP .

APPLIED PHYSICS LETTERS, 1967, 11 (04) :132-&

[6]

HSU ST, 1975, RCA REV, V36, P240

[7] ANISOTROPY IN ELECTRICAL PROPERTIES OF [001] SI/[0112] AI2O3 [J].

HUGHES, AJ ;

THORSEN, AC .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) :2304-2310

[8] STRESS-INDUCED ANISOTROPY IN ELECTRICAL PROPERTIES OF SI-AL2O3 [J].

HUGHES, AJ .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2849-2863

[9]

HYNECEK J, 1974, J APPL PHYS, V45, P2631, DOI 10.1063/1.1663642

[10] SPATIAL DEPENDENCE OF CARRIER LIFETIME IN THIN-FILMS OF SILICON ON SAPPHIRE [J].

KRANZER, D .

APPLIED PHYSICS LETTERS, 1974, 25 (02) :103-105

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