BEHAVIOR OF GA ON SI(100) AS STUDIED BY SCANNING TUNNELING MICROSCOPY

被引：99

作者：

NOGAMI, J

PARK, SI

QUATE, CF

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 21期

关键词：

D O I：

10.1063/1.100289

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2086 / 2088

页数：3

共 21 条

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